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鐘志有 , 朱雅,陸軸.摻錫In2O3薄膜的晶粒生長及其微觀結構性質研究[J].中南民族大學學報自然科學版,2019,(2):238-244
摻錫In2O3薄膜的晶粒生長及其微觀結構性質研究
Grain growth and microstructural properties of tin doped In2O3 thin films
  
DOI:10.12130/znmdzk.20190217
中文關鍵詞: 摻錫In2O3  薄膜  微觀結構性質
英文關鍵詞: tin doped In2O3  thin film  microstructural properties
基金項目:湖北省自然科學基金資助項目(2011CDB418); 中央高?;究蒲袠I務費專項資金資助項目(CZP17002)
作者單位
鐘志有1,2 , 朱雅1,陸軸1 1 中南民族大學 電子信息工程學院, 武漢 430074
2 中南民族大學 智能無線通信湖北省重點實驗室, 武漢 430074 
摘要點擊次數: 207
全文下載次數: 184
中文摘要:
      以氧化錫(SnO2)摻雜的氧化銦(In2O3)陶瓷靶作為濺射源材料,利用射頻磁控濺射工藝在普通玻璃基底上沉積了摻錫In2O3(In2O3:Sn)薄膜樣品,通過XPS、XRD和SEM等表征手段,研究了基底溫度對薄膜晶粒生長和微觀結構的影響。結果表明,所有In2O3:Sn樣品均為多晶薄膜并具有體心立方鐵錳礦晶體結構,基底溫度對晶粒生長特性和微觀結構性能具有明顯的影響?;诇囟壬邥r,薄膜沿(222)晶面的織構系數和平均晶粒尺寸先增大后減小,而位錯密度和晶格應變則呈現相反的變化趨勢。當基底溫度為250°C時,In2O3:Sn樣品沿(222)晶面的織構系數最高、平均晶粒尺寸最大、位錯密度最小、晶格應變最低,薄膜具有最佳的(222)晶面擇優取向生長特性和微觀結構性能。
英文摘要:
      The thin films of tin doped indium oxide (In2O3:Sn) were prepared onto glass substrates by radio-frequency (RF) magnetron-sputtering system, using a sintered ceramic target with a mixture of indium oxide (In2O) and tin oxide (SnO2). The effect of substrate temperature on the grain growth and mirostructure of In2O3:Sn samples was characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), scanning electron microscopy (SEM) and other characterization methods. The experimental results show that all the samples are polycrystalline with a cubic bixbyite type crystal structure. The substrate temperature significantly affects the grain growth and mirostructural characteristics of the samples. As the substrate temperature increases, the texture coefficient of (222) plane and average crystallite size increase firstly and then decrease, while the dislocation density and lattice strain exhibit an opposite trend. The In2O3:Sn sample deposited at 250°C possesses the best crystalline quality and microstructural properties, with the highest texture coefficient of (222) plane, the maximum average crystallite size, the minimum dislocation density and the lowest lattice strain.
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