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射頻功率對MgO摻雜鎵鋅氧化物薄膜性能的影響
Effect of radio-frequency power on the characteristics of MgO doped gallium-zinc oxide thin films
投稿時間:2019-05-05  修訂日期:2019-05-05
DOI:
中文關鍵詞: 鎵鋅氧化物  摻雜  電學性能
英文關鍵詞: gallium-zinc oxide  doping  electrical properties
基金項目:
作者單位E-mail
顧錦華 中南民族大學 實驗教學與實驗室管理中心 jinhwagu@163.com 
陸軸 中南民族大學 電子信息工程學院  
陳首部 中南民族大學 電子信息工程學院  
摘要點擊次數: 115
全文下載次數: 0
中文摘要:
      采用磁控濺射技術制備了MgO摻雜鎵鋅氧化物薄膜樣品,通過X射線衍射(XRD)、電阻率、載流子濃度和Hall遷移率測試分析,研究了射頻功率對薄膜樣品微觀結構和電學特性的影響。實驗結果表明,所有樣品均為六角纖鋅礦結構并具有明顯的c軸擇優取向生長特點,其微觀結構和電學特性與射頻功率密切相關。當射頻功率為125SW時,所制備薄膜的晶粒尺寸最大為52.1Snm、張應力最小為0.082SGPa、電阻率最低為1.54′10-3SW×cm、載流子濃度最大為5.26′1020Scm-3、Hall遷移率最高為7.41Scm2×V-1×s-1,具有最優的結晶性質和電學性能。
英文摘要:
      The thin films of MgO doped gallium-zinc oxide were prepared using magnetron sputtering technique. The effect of radio-frequency power on the microstructure and electrical characteristics of the deposited thin films was investigated by X-ray diffraction (XRD), electrical resistivity, carrier concentration and Hall mobility measurements. The experimental results demonstrate that all the deposited thin films have hexagonal wurtzite structure with highly c-axis orientation. The radio-frequency power significantly affects the microstructure and electrical characteristics of the deposited thin films. When the radio-frequency power of 125SW, the thin film possesses the best crystalline quality and electrical characteristics, with the largest crystallite size of 52.1Snm, the minimum tensile stress of 0.082SGPa, the lowest electrical resistivity of 1.54′10-3SW×cm, the maximum carrier concentration of 5.26′1020Scm-3 and the highest Hall mobility of 7.41Scm2×V-1×s-1.
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